Computer-aided linear modelling of high-frequency bipolar transistorsCUTTERIDGE, O. P. D; ZHANG, Y. S.IEE proceedings. Part G. Electronic circuits and systems. 1984, Vol 131, Num 6, pp 252-260, issn 0143-7089Article

Small signal bias dependent model for high frequency transistorsBHARATH KUMAR, K.IEE proceedings. Part I. Solid-state and electron devices. 1985, Vol 132, Num 5, pp 201-204, issn 0143-7100Article

A simplified error model for accurate measurement of high-frequency transistor S parametersMINGCHEN HE.IEEE transactions on instrumentation and measurement. 1985, Vol 34, Num 4, pp 616-619, issn 0018-9456Article

High-frequency performance of non-conventional-geometry bipolar transistorsHEBERT, F; ROULSTON, D. J.Solid-state electronics. 1986, Vol 29, Num 12, pp 1239-1241, issn 0038-1101Article

High-frequency characteristics of AlGaAs/GaAs heterojunction bipolar transitorsITO, H; ISHIBASHI, T; SUGETA, T et al.IEEE electron device letters. 1984, Vol 5, Num 6, pp 214-216, issn 0741-3106Article

High frequency distortion analysis of DMOS transistorsSIN, J. K. O; SALAMA, C. A. T.Solid-state electronics. 1985, Vol 28, Num 12, pp 1223-1233, issn 0038-1101Article

Small-signal high-frequency performance of power MOS transistorsMCGREGOR, P; MENA, J; SALAMA, C. A. T et al.Solid-state electronics. 1984, Vol 27, Num 5, pp 419-432, issn 0038-1101Article

TRANSISTOR DESIGN FOR LOW DISTORSION AT HIGH FREQUENCIES.ABRAHAM HE; MEYER RG.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 12; PP. 1290-1297; BIBL. 12 REF.Article

DISPOSITIFS DE FORMATION D'IMPULSIONS DE LA NANOSECONDE A TRANSISTORS DE PUISSANCE SUPERHAUTES FREQUENCES ET A AVALANCHED'YAKONOV VP; PROFATILOV AI.1978; PRIBORY TEKH. EKSPER.; SUN; DA. 1978; NO 3; PP. 134-136; BIBL. 5 REF.Article

STEPPED ELECTRODE TRANSISTOR: SET.SAKAI T; SUNOHARA Y; SAKAKIBARA Y et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 43-46; BIBL. 1 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

MESURE DE L'IMPEDANCE D'ENTREE ET DU GAIN DE TRANSISTORS HAUTE FREQUENCE DE PUISSANCE. AMPLIFICATEURS 20 W (1,5 A 30 MHZ) OBTENUS AVEC LE TRANSISTOR 2 N 3632)PUPEZA D; MUNTEANU V.1977; ELECTROTEH. ELECTRON. AUTOMAT., AUTOMAT. ELECTRON.; ROMAN.; DA. 1977; VOL. 21; NO 2; PP. 61-66; ABS. RUSSE ALLEM. ANGL. FR.; BIBL. 5 REF.Article

A COMPARISON OF DC AND RF PULSE SUSCEPTIBILITIES OF UHF TRANSISTORS.WHALEN JJ.1977; I.E.E.E. TRANS. ELECTROMAGN. COMPATIB.; U.S.A.; DA. 1977; VOL. 19; NO 2; PP. 49-56; BIBL. 17 REF.Article

EIN RATIONELLES VERFAHREN ZUR BESTIMMUNG DER RAUSCHKENNGROESSEN VON TRANSISTOREN IM VHF/UHF-BEREICH. = UNE METHODE RATIONNELLE DE DETERMINATION DES PARAMETRES DE BRUIT DES TRANSISTORS DANS LA GAMME DES ONDES METRIQUES ET DECIMETRIQUESOHLER M.1976; FREQUENZ; DTSCH.; DA. 1976; VOL. 30; NO 12; PP. 340-343; ABS. ANGL.; BIBL. 3 REF.Article

AMPLIFICATEURS-FORMATEURS D'IMPULSIONS DE TENSION A TRANSISTORS MOS DE PUISSANCEZIENKO SI.1980; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1980; NO 2; PP. 121-123; BIBL. 3 REF.Article

PRISE EN COMPTE DE L'EFFET DYNAMIQUE DE DEPLACEMENT DANS UN MODELE A FAIBLES SIGNAUX DE TRANSISTOR HAUTE FREQUENCEBUBENNIKOV AN.1977; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; UKR; DA. 1977; VOL. 20; NO 8; PP. 83-90; BIBL. 7 REF.Article

A METALLIZATION SYSTEM FOR MICROWAVE AND UHF POWER TRANSISTORS.DANLEY LW.1975; SOLID STATE TECHNOL.; U.S.A.; DA. 1975; VOL. 18; NO 6; PP. 35-39; BIBL. 5 REF.Article

GENERATEURS D'IMPULSIONS RECTANGULAIRES DE LA NANOSECONDE A TRANSISTORS DE PUISSANCE SUPERHAUTES FREQUENCES ET A AVALANCHED'YAKONOV VP.1978; PRIBORY TEKH. EKSPER.; SUN; DA. 1978; NO 3; PP. 129-130; BIBL. 1 REF.Article

IDENTIFICATION DES PARAMETRES DU MODELE DE COMMANDE DE CHARGE INTEGRAL DES TRANSISTORS BIPOLAIRESKORAN L.1977; ELEKTROTECH. CAS.; CESKOSL.; DA. 1977; VOL. 28; NO 6; PP. 439-448; ABS. RUSSE ALLEM. ANGL.; BIBL. 9 REF.Article

ELEMENTEBESTIMMUNG FUER EIN HF-TRANSISTOR-ERSATZSCHALTBILD. = LA DETERMINATION DES ELEMENTS DU SCHEMA EQUIVALENT D'UN TRANSISTOR HFBAUMANN P; MOLLER W; SEIDEL G et al.1976; NACHR.-TECH., ELEKTRON.; DTSCH.; DA. 1976; VOL. 26; NO 4; PP. 139-140; BIBL. 3 REF.Article

MODELE DE RESISTANCE REPARTIE POUR LA BASE D'UN TRANSISTOR AVEC UN EMETTEUR A BANDEBUBENNIKOV AN.1980; RADIOTEKHNIKA; SUN; DA. 1980; VOL. 35; NO 1; PP. 28-32; BIBL. 7 REF.Article

COLLECTOR JUNCTION MODELING OF PLANAR TRANSISTORS.BHATTACHARYYA AB; SUBODH JINDAL; BASAVARAJ TN et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 12; PP. 977-984; BIBL. 17 REF.Article

HIGH-PERFORMANCE TRANSISTORS WITH ARSENIC-IMPLANTED POLYSIL EMITTERS.GRAUL J; GLASL A; MURRMANN H et al.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 4; PP. 491-495; BIBL. 15 REF.Article

Simple models for high-frequency MESFETs and comparison with experimental resultsOXLEY, C. H; HOLDEN, A. J.IEE proceedings. Part H. Microwaves, antennas and propagation. 1986, Vol 133, Num 5, pp 335-340, issn 0950-107XArticle

The deformable-channel model ― A new approach to high-frequency MESFET modelingCROWNE, F. J; ESKANDARIAN, A; SEQUEIRA, H. B et al.IEEE transactions on microwave theory and techniques. 1987, Vol 35, Num 12, pp 1199-1207, issn 0018-9480Article

Système de Load-pull temporel pour l'optimisation visuelle des classes de fonctionnement à très haut rendement des transistors RF et Microondes = Time load-pull system for the visual optimization of very high yield RF and microwave transistors operating classesBARATAUD, D; BLACHE, F; CAMPOVECCHIO, M et al.Journées nationales microondes. 1997, pp 412-413, 2VolConference Paper